DMN2600UFB document number: ds31983 rev. 3 - 2 1 of 6 www.diodes.com july 2010 ? diodes incorporated DMN2600UFB new product n-channel enhancement mode mosfet features ? low on-resistance ? low gate threshold voltage ? fast switching speed ? ultra-small surface mount package ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? esd protected gate 1kv ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn1006-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 5 ? ordering information: see page 5 ? weight: 0.001 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 25 v gate-source voltage v gss 8 v continuous drain current (note 3) steady state t a = 25c t a = 85c i d 1.3 0.9 a pulsed drain current i dm 3.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 0.54 w thermal resistance, junction to ambient @t a = 25c r ja 234 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead 2. diodes inc's "green" policy can be found on our w ebsite at http://www.diodes.c om/products/lead_free/index.php 3. device mounted on fr-4 substrate pcb board, with minimum recommended pad layout. dfn1006-3 e q uivalent circuit top view bottom view internal schematic source body diode gate protection diode gate drain d s g esd protected to 1kv
DMN2600UFB document number: ds31983 rev. 3 - 2 2 of 6 www.diodes.com july 2010 ? diodes incorporated DMN2600UFB new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 25 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1 a v ds = 25v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 8v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 0.45 - 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - - 350 m v gs = 4.5v, i d = 200ma 450 v gs = 2.5v, i d = 100ma 600 v gs = 1.8v, i d = 75ma forward transfer admittance |y fs | 40 - - ms v ds = 3v, i d = 200ma diode forward voltage v sd - - 1.2 v v gs = 0v, i s = 300ma dynamic characteristics (note 5) input capacitance c iss - 70.13 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 7.56 - pf reverse transfer capacitance c rss - 5.59 - pf gate resistance r g - 72.3 - v ds =0v, v gs = 0v, f = 1mhz total gate charge q g - 0.85 - nc v gs = 4.5v, v ds = 15v, i d = 1a gate-source charge q g s - 0.16 - nc gate-drain charge q g d - 0.11 - nc turn-on delay time t d ( on ) - 4.1 - ns v ds = 15v, r l =15 v gs = 10v, r g = 6 turn-on rise time t r - 11.5 - ns turn-off delay time t d ( off ) - 34.8 - ns turn-off fall time t f - 20.9 - ns notes: 4. short duration pulse test used to minimize self-heating effect. 5. guaranteed by design. not subject to production testing. 0 0.5 1.0 1.5 2.0 01 2 345 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 10v gs 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds
DMN2600UFB document number: ds31983 rev. 3 - 2 3 of 6 www.diodes.com july 2010 ? diodes incorporated DMN2600UFB new product 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 2.5v gs v = 1.8v gs 0 0.2 0.4 0.6 0.8 0 0.25 0.5 0.75 1 1.25 1.5 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0.6 0.8 1.0 1.2 1.4 1.6 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a
DMN2600UFB document number: ds31983 rev. 3 - 2 4 of 6 www.diodes.com july 2010 ? diodes incorporated DMN2600UFB new product 1 10 100 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c rss c oss f = 1mhz 0 5 10 15 20 25 30 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i , leaka g e c u r r e n t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 15v i = 1a ds d 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 235c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
DMN2600UFB document number: ds31983 rev. 3 - 2 5 of 6 www.diodes.com july 2010 ? diodes incorporated DMN2600UFB new product ordering information (note 6) part number case packaging DMN2600UFB-7 dfn1006-3 3000/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information package outline dimensions suggested pad layout dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 na = product type marking code dot denotes drain side l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z na
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